【摘要】 采用ＴＥＭ观测与Ｘ射线双晶回摆曲线检测化学腐蚀逐层剥离深度相结合的方法，分析了ＳＩＧａＡｓ晶片由切、磨、抛加工所引入的损伤层深度。比较两种方法测量结果上的差异，得出了ＴＥＭ观测到的只是晶片损伤层厚度，而Ｘ射线双晶回摆曲线检测化学腐蚀逐层剥离所得的深度是晶片损伤层及其形成应力区的总厚度的结论更多还原

【Abstract】 The surface damage Layer in the SIGaAs wafer induced by cutting, grining and polishing was analyzed by means of transmission electron microscopy and Xray rocking curve measurements after the wafer was chemically etched. A method for determining the depth of surface damage layer of SIGaAs wafer according to the quantitative difference in the results obtained by the two methods is proposed.更多还原