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GaP∶NLPE片的纵向载流子浓度分布
Carrier Concentration Profiles of GaP∶N LPE Wafers
【摘要】 阐述了GaP∶NLPE片纵向载流子浓度分布的测量方法, 探讨了各层载流子浓度和载流子浓度分布对发光效率的影响。
【Abstract】 Abstract: By electrochemical C U measurment associated with chemical etching, the carrier concentration profiles in a batch of GaP∶N LPE samples made in China were measured. The relative luminances of the samples were also measured with electroluminescence and photoluminescence. A comparison between the two measurement results showed that, the carrier concentration in the first n type epilayer depends on the concentration of multi crystalline GaP mixed in the Ga solution, and the luminance increases with decreasing of the carrier concentration in the second n type epilayer.
- 【文献出处】 稀有金属 ,CHINESE JOURNAL OF RARE METALS , 编辑部邮箱 ,1999年06期
- 【分类号】TN304.2
- 【下载频次】57