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GaP∶NLPE片的纵向载流子浓度分布

Carrier Concentration Profiles of GaP∶N LPE Wafers

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【作者】 李桂英刘荣寰杨锡震王亚非桑丽华

【Author】 Li Guiying 1, Liu Ronghuan 2, Yang Xizhen 1, Wang Yafei 1 and Sang Lihua 3 (1. The Analysis and Measurement Center, Beijing Nonmal University, Beijing 100875, China) (2. Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China

【机构】 北京师范大学分析测试中心!北京100875中国科学院半导体研究所!半导体材料科学开放实验室北京100083北京师范大学物理系!北京100875

【摘要】 阐述了GaP∶NLPE片纵向载流子浓度分布的测量方法, 探讨了各层载流子浓度和载流子浓度分布对发光效率的影响。

【Abstract】 Abstract: By electrochemical C U measurment associated with chemical etching, the carrier concentration profiles in a batch of GaP∶N LPE samples made in China were measured. The relative luminances of the samples were also measured with electroluminescence and photoluminescence. A comparison between the two measurement results showed that, the carrier concentration in the first n type epilayer depends on the concentration of multi crystalline GaP mixed in the Ga solution, and the luminance increases with decreasing of the carrier concentration in the second n type epilayer.

【关键词】 GaP:NLPE载流子浓度
【Key words】 GaP∶NLPECarrier concentration profiling
  • 【文献出处】 稀有金属 ,CHINESE JOURNAL OF RARE METALS , 编辑部邮箱 ,1999年06期
  • 【分类号】TN304.2
  • 【下载频次】57
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