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W/SiC纳米多层膜的制备及表征
Growth and Characterization of W/SiC Nanometer Multilayers
【摘要】 采用多靶磁控溅射制备了 W/SiC纳米多层膜。并用 XRD和 TEM研究了 W/SiC纳米多层膜的微结构。研究表明,W/SiC纳米多层膜的调制结构界面平直、清晰、周期性好;SiC调制层为非晶态,W调制层在大调制周期为纳米晶,并随调制周期减小逐渐转变为非晶态。
【Abstract】 W/SiC nanometer multilayers were grown byimulti-tagnetron。 sputtering. The microstruc- tures and of the films were studied with X-ray diffraction electron microscopy.The results show that the film have well-defined interface and good periodicity. The SiC layers were found to be amorphous,whereas,the W layers consist of nanometer-sized crystal grains.Howevers,as the modulation length de- creases,only amorphous W can be observed in the W modulation layers.
【关键词】 W/SiC纳米多层膜;
多靶溅射;
调制结构;
【Key words】 W/SiC nanomenter multilayers; Multi-target sputtering; Modulation structure;
【Key words】 W/SiC nanomenter multilayers; Multi-target sputtering; Modulation structure;
- 【文献出处】 真空科学与技术 , 编辑部邮箱 ,1999年04期
- 【分类号】TB43
- 【被引频次】4
- 【下载频次】92