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W/SiC纳米多层膜的制备及表征

Growth and Characterization of W/SiC Nanometer Multilayers

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【作者】 李戈扬; 辛挺辉; 吴亮; 李鹏兴; 张流强;

【Author】 Li Geyang,Zhang Liuqiang,Xin Tinghui,Wu Liang,Li Pengxins ( State Key Lab. of MMC, Shanghai Jiao Tong University, Shanghai, 200030) ( Shanghai Institute of Metallurgy, Academia Sinica, Shanghai, 200050)

【机构】 上海交通大学金属基复合材料国家重点实验室!上海200030; 中国科学院上海冶金研究所上海200050; 中国科学院上海冶金研究所上海2;

【摘要】 采用多靶磁控溅射制备了 W/SiC纳米多层膜。并用 XRD和 TEM研究了 W/SiC纳米多层膜的微结构。研究表明,W/SiC纳米多层膜的调制结构界面平直、清晰、周期性好;SiC调制层为非晶态,W调制层在大调制周期为纳米晶,并随调制周期减小逐渐转变为非晶态。

【Abstract】 W/SiC nanometer multilayers were grown byimulti-tagnetron。 sputtering. The microstruc- tures and of the films were studied with X-ray diffraction electron microscopy.The results show that the film have well-defined interface and good periodicity. The SiC layers were found to be amorphous,whereas,the W layers consist of nanometer-sized crystal grains.Howevers,as the modulation length de- creases,only amorphous W can be observed in the W modulation layers.

  • 【分类号】TB43
  • 【被引频次】4
  • 【下载频次】92
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