【摘要】 利用同步辐射光电子能谱技术研究了Gd在GaAs(10 0 )表面的吸附。当吸附厚度小于 0 47nm时 ,界面反应弱 ;在 0 47～ 0 9nm范围内 ,界面反应变得强烈 ;大于 0 9nm时 ,界面反应停止。在吸附过程中Gd 4 f首先是一单峰结构 ,随着Gd的增加 ,Gd 4 f演变为双峰结构。根据对实验数据的分析 ,认为Gd在反应层上以团簇的形式吸附更多还原

【Abstract】 Adsorption of Ga onto GaAs(100) was studied with synchrotron radiation photoelectron spectroscopy.The results showed that the reactivity of the adsorbate and the substrate depends on coverage.The rather weak interaction,at a coverage lower than 0 47 nm,becomes increasingly stronger in the range from 0 47 to 0 9 nm and ceases at the coverage higher than 0 9 nm.The originally single peaked Gd 4 f spectrum evolved into a double peaked line with the increase of Gd coverage.We suggested that Gd atoms were adsorbed on the substrate in the form of clusters.更多还原