【摘要】 利用自行研制的超高真空化学气相沉积系统 ,在直径 3英寸的衬底硅片上生长了锗硅应变外延层 ,并进行了实时掺杂生长。利用双晶X射线衍射技术测试了外延层 ,确定外延层的组分与晶体质量 ,并利用二次离子质谱仪进行了纵向组分分布剖析 ,利用扩展电阻仪确定外延层的电学特性。研究了锗硅应变外延层的生长特性和材料特性 ,生长速率随锗组分的增加而降低 ,以氢气为载气的硼烷对锗硅合金的生长速率有促进作用。还通过生长锗组分渐变的缓冲层 ,改善了外延层的晶体质量更多还原

【Abstract】 Germanium silicon strained layers were successfully grown on a 3 in. Si wafer by ultra high vacuum by chemical vapor deposition.Boron was doped in situ into the epilayers.Ge Si strained layers were characterized with double crystal X ray diffraction,secondary ion mass spectroscopy and spreading resistance.The Ge content in the epilayers was found to be homogeneous.An increase of Ge content reduces the growth rate of the epilayer,whereas boron doped epilayers have higher growth rate.A buffer layer with slow varying Ge content may considerably improve the epilayer quality.更多还原