【摘要】 应用薄膜晶粒边界散射的三维物理模型,分析了Ni薄膜晶粒结构对Ni薄膜电阻特性的影响,采用正交试验法得到了用S枪磁控溅射的Ni薄膜具有良好导电特性的最佳工艺条件.SEM照片表明了不同工艺条件下Ni薄膜的薄膜晶粒结构,最后给出了用S枪磁控溅射的Ni薄膜制成的温度传感器的电阻温度特性更多还原

【Abstract】 In this paper we analyzed the influnce of grain structure on electrical characteristic using the three dimentional grain boundaries scattering physical model.We made Ni thin film temperature sensor with perfect electrical performance under optimal technology procedure,which be obtained by orthogonal experimental technique.The SEM photos of thin film grain sturcture are shown under different technology procedure.The resistance temperature characteristic of the sensor made by the S\|gun magnatron sputtered Ni thin film also be described.更多还原