【摘要】 介绍了 ａ Ｓｉ∶ Ｈ Ｔ Ｆ Ｔ 开关器件的有源层、栅绝缘层、欧姆接触层以及界面特性的研究工作。研制了 ａ Ｓｉ∶ Ｈ Ｔ Ｆ Ｔ 单管器件， 其开关电流比达到 ６ 个数量级， 为最终研制ａ Ｓｉ∶ Ｈ Ｔ Ｆ Ｔ Ａ Ｍ Ｌ Ｃ Ｄ 视频图像显示器奠定了坚实的基础。更多还原

【Abstract】 The study of the active layer, the insulator layer, the ohmic contact layer, and the interface of a Si∶H/a  SiN x ∶H in a Si TFT devices were presented in this paper The single a Si TFT device was prepared, which ratio of on to off current reached to six orders of magnitude This work laid a solid foundation for a Si∶H TFT AM LCD used for video display更多还原