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流动注射-化学发光法测定痕量锇(Ⅳ)的研究及应用

Study on Flow-Injection Chemiluminescence for the Determination of Trace Amount Os(IV) and Its Application

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【作者】 韩鹤友; 何治柯; 罗庆尧; 曾云鹗;

【Author】 Han Heyou;He Zhike;Luo Qingyao;Zeng Yun’e (Department of Chemistry, Wuhan University, Wuhan 430072)

【机构】 武汉大学化学系!武汉; 430072;

【摘要】 基于丙酮在吐温40一氢氧化钾一过氧化氢一O_s(Ⅳ)体系中增强O_s(Ⅳ)的化学发光,采用流动注射进样技术,建立了测定痕量锇(Ⅳ)的新的化学发光分析法.方法的线性范围为1.0X1~-8~1.0X10~-6O(Ⅳ)/mL检出限为2.0X10~-9g/m,对10X10~-7g/mLOs(Ⅳ)标准溶液测定11次的相对标准偏差为3.0%.拟定方法用于贵金属精矿中痕量锇的测定,结果满意。本文还进行了增敏机理的探讨.

【Abstract】 A new chemiluminescent analysis for the determination of trace amount Os (VI) by flow--injection was proposed in this paper, based on acetone enhancing chemiluminescence of Os(VI) in Tween 40 - KOH -H2O2 - Os (VI ) chemiluminescent system. The detection limit is 2.0x10-9g/mL, the linear range is 1.0x10-8 1.0x 10-6g/mL for Os(VI)and the relative standard deviation is 3.0% for 11 measurements of 1.0x 10-7g/mL for Os(VI). The proposed method has been applied to the determination of Os(VI) in precious metal ores with satisfatory results. The mechanism of acetone enhancing was also investigated.

【关键词】 流动注射; 化学发光; 吐温40; 锇;
【Key words】 Flow-injection; Chemiluminescence; Tween40; Osmium;
  • 【文献出处】 冶金分析 ,METALLURGICAL ANALYSIS , 编辑部邮箱 ,1999年02期
  • 【分类号】TF033
  • 【被引频次】6
  • 【下载频次】50
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