【摘要】 采用直拉热丝ＣＶＤ法沉积了面积３ 英寸的金刚石薄膜。硅衬底在沉积前采用０－５ ～１μｍ 金刚石微粉研磨，使成核密度达１０１０ 个／ｃｍ２ 以上，同时调整沉积工艺，特别是降低沉积气压至０－５ ～１－５ｋＰａ，促进了金刚石的二次成核，使薄膜变得十分平坦，当薄膜厚度为５μｍ 时，表面粗糙度Ｒａ 仅为６０ｎｍ 左右。另外，以铝作为保护膜，用氧离子束刻蚀金刚石薄膜，得到宽度为３ ～５μｍ 的精细金刚石薄膜图形。更多还原

【Abstract】 Large area and smooth surface diamond thin film on 3 inch silicon substrate have been prepared using hot filament chemical vapor deposit (HFCVD) technology. To in crease nuclear density the substrate was polished with diamond powder of 0.5～1.0 micrometer and the nuclear density was larger than 10 10 /cm 2. Adjusting the deposition Parameters, especially reducing the deposition pressure to enhance secondary nucleation, the surface of diamond film became fine and smooth. The roughness of the surface was only 60nm when the thickness was 5 micrometer. The diamond film with line wide 3 5 micrometer fine pattern was obtained by oxygen ion beam etching method in which a patterned aluminium film was as the protective layer.更多还原