【摘要】 铁电薄膜与半导体集成，产生了新一代非易失存储器．它的功耗之小，写入速度之快，可重写次数之多以及抗辐照能力之强是目前任何一种半导体存储器所不及的．文章介绍了非易失铁电存储器的原理、特点、进展和应用，并讨论了这类存储器在进入大规模商业生产时所面临的若干材料、工艺和器件失效等问题．更多还原

【Abstract】 The combination of ferroelectric thin films with integrated semiconductor chips has created a new generation of non-volatile memories.They are superior to all traditional non-volatile memories in their low power consumption,high writing speed,high writing cycle endurance and strong anti-radiation properties. This paper describes the principle,characteristics,development and applications of non-volatile ferroelectric memories Related issues pertaining to ferroelectric thin films,processing technologies and device degradation should be solved before embarking on commercial production.更多还原