【摘要】 采用射频直流等离子化学气相沉积法用 Ｃ２ Ｈ２ 、 Ｎ２ 和 Ａｒ 组成的混合气体制备ａ Ｃ： Ｈ （ Ｎ） 薄膜， 研究了薄膜的制备工艺、结构及直流导电特性实验结果表明， ａ Ｃ： Ｈ （ Ｎ） 薄膜的沉积速率随混合气体中 Ｃ２ Ｈ２ 含量的增加而增大， 当混合气体中 Ｎ２ 含量增加到７５ ％ 时， 薄膜的含氮量增大到９０９ ％ 薄膜中 Ｃ、 Ｎ 原子以 Ｃ≡ Ｎ 和 Ｃ Ｎ 键的形式存在， 结合进薄膜中的氮大大降低薄膜的直流电阻率更多还原

【Abstract】 a C:H(N) films were deposited from mixture gases of C 2H 2, Ar and N 2 by r f d c PECVD method The deposition process, structure and direct current resistivity of the a C:H(N) films were studied The deposition rate of the a C:H(N) films increases with the increase of C 2H 2 content in the feed gases The study of XPS and FTIR spectroscopy indicates that up to 9 09at% N can be incorporated with C atoms in a C:H(N) films as C≡N and C N The bonded N in a C:H(N) films leads to the decrease of direct current resistivity更多还原