【摘要】 由ｐ＋－ＧａＡｓ帽层和ｐ－ＡｌｘＧａ１－ｘＡｓ（ｘ＝０·８—０．９）窗口层构成的异质薄膜体系是ＧａＡｓ太阳电池器件中的常规结构。对该异质结构的只腐蚀ＧａＡｓ而不腐蚀ＡｌＧａＡｓ的选择性腐蚀工艺是ＧａＡｓ太阳电池制备过程中的一道关键工序。针对传统腐蚀工艺中出现的腐蚀后露出的ＡｌＧａＡｓ表面呈现彩色的问题，从改进腐蚀液配方角度，围绕通常采用的氨水－双氧水（ＮＨ４ＯＨ－Ｈ２Ｏ２）腐蚀液体系，对该问题作了深入细致的专门研究，并与柠檬酸－双氧水（Ｃ６Ｈ８Ｏ７－Ｈ２Ｏ２）和柠檬酸－柠檬酸钾－双氧水（Ｃ６Ｈ８Ｏ７－Ｋ３Ｃ６Ｈ５Ｏ７－Ｈ２Ｏ２）腐蚀液体系作对比，最终得到了较满意的氨水－双氧水－磷酸（ＮＨ４ＯＨ－Ｈ２Ｏ２－Ｈ３ＰＯ４）新腐蚀液体系。这种腐蚀液体系不仅可在较宽的溶液浓度范围内实现对高Ａｌ组分ＧａＡｓ／ＡｌＧａＡｓ异质结构的选择性腐蚀，而且也不会对露出的ＡｌＧａＡｓ外观产生明显影响更多还原

【Abstract】 The selective etching of GaAs/Al XGa 1-x As(x=0 8～0 9)heterostructure,of which the GaAs solar cell of conventional structure is made,is a key process in the fabrication of solar cell removing the GaAs cap layer everywhere except under the grid lines and exposing the AlGaAs window layer.To solve the problem of colour surface of AlGaAs layer exposed by use of traditional etchant solutions,this paper,on the basis of generally used aqueous ammonia hydrogen peroxide(NH 4OH-H 2O 2)etchant,and by means of improving echant solution ingradients,has done a careful special research to probe into this issue and finally,comparing with citric acid hydrogen peroxide(C 6H 8O 7-H 2O 2)and citric acid potassium citrate hydrogen peroxide(C 6H 8O 7-K 3C 6H 5O 7-H 2O 2)solutions,obtained the relatively satisfactory new etchant of aqueous ammonia hydrogen peroxide phosphoric acid(NH 4OH-H 2O 2-H 3PO 4).This etchant can not only perform selective etching of GaAs/AlGaAs heterostructure with high Al composition in a much broader range of solution concentrations,but also not produce apparent bad effects on the outward appearance of AlGaAs layer exposed.更多还原