【摘要】 采用化学池沉积法，同时在３种衬底（载玻片、ＩＴＯ玻片、ＳｎＯ２玻片）上沉积ＣｄＳ薄膜，利用扫描电镜（ＳＥＭ）、透射光谱、Ｘ射线衍射（ＸＲＤ）和微电流高阻计等方法对沉积膜进行了测试分析，算出了ＣｄＳ薄膜的能隙宽度Ｅ０和电导激活能Ｅａ．结果表明：沉积膜表观均匀、密实，结晶取向性以ＳｎＯ２玻片衬底为佳；能隙宽度Ｅ０＝２．２３ｅＶ；电导激活能Ｅａ＝０．９２～１．０１ｅＶ．阐述了ＣｄＳ膜的生长沉积化学过程及机制更多还原

【Abstract】 Polycrystalline thin film CdS was dipped by Chemical Bath Deposition.SEM and XRD showed that the film was continuous,homogeneous and with high compactness.From the observed absorption data it was found that plot of α 1/2 against hν gave fairly good straight lines indicating that the transitions were direct and allowed.A reaction mechanism was given in brief also.更多还原