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温梯法Al2O3晶体位错形貌分析
Topography Analysis of Dislocation in Al 2O 3 Crystal by Temperature Gradient Technique
【摘要】 用温度梯度法( Temperature Gradient Technique ,简称温梯法或 T G T 法) ,定向籽晶[0001] 方向,生长出110mm ×80m m Al2 O3 单晶,晶体完整、透明。采用硼酸钠玻璃液作为 Al2 O3 晶体的化学抛光和化学腐蚀剂,观察了晶体不同部位处(0001) 、(1120) 晶片的化学腐蚀形貌相,(0001) 切片的位错腐蚀坑呈三角形,位错密度为2 ×103 ~3 ×103/cm2 ;(1120) 切片位错腐蚀坑呈菱形,位错密度为7×103 ~8 ×103/cm2 ;而且等径生长部位的完整性比放肩处高。利用同步辐射 X 射线白光衍射实验分析了(0001) 晶片的(2021) ,(1101) 和(0221) 衍射面内的位错组态。确定了两组位错线的 Burgers矢量,温梯法生长的 Al2 O3 晶体中的位错主要是刃型位错。
【Abstract】 The large size Al 2O 3 crystal of 110mm in diameter and 80mm in high has been grown using a directional seed crystal in [0001]direction by the Temperature gradient technique (TGT) in our laboratory.The as grown Al 2O 3 crystal is integraty and transparent.The B 2O 3 Na 2O glass system was adopted as the chemical polisher and chemical corrodent.The etch pits of the (0001) and (1120) slices cut from the various parts of as grown crystal were observed under the Leitz microscope.The dislocation etching pits of (0001) slice are triangular with the lower dislocation density of 2×10 3—3×10 3cm -2 ,while the dislocation etching pits of (1120) slices are quadrilateral with the higher dislocation density of 7×10 3—8×10 3cm -2 .The dislocation configurations and diffraction contrasts in some diffraction planes of (0001)slice have been studied by the synchrotron radiation X ray diffraction topography.The Burgers vectors of two array dislocations are determined,and the dislocations in Al 2O 3 crystal grown by TGT are edge type dislocation.
【Key words】 Al 2O 3 crystal; dislocation; etch pit; diffraction contrast; temperature gradient technique;
- 【文献出处】 人工晶体学报 ,JOURNAL OF SYNTHETIC CRYSTALS , 编辑部邮箱 ,1999年03期
- 【分类号】O772
- 【被引频次】2
- 【下载频次】157