节点文献
一种高电源抑制比CMOS能隙基准电压源
A Simple CMOS Bandgap Voltage Reference with High PSRR
【摘要】 介绍了一个采用0.6μm数字CMOS工艺制作的能隙基准电压源电路,该电路具有小的硅片面积(0.06mm2)、高电源抑制比和较低温度系数。在该电路应用于高精度电路的偏置系统时,还可增加改善输出偏置电流温度系数的电路。
【Abstract】 A bandgap voltage reference circuit is described,which is compatible with digital CMOS process.With a small chip area of 0.06 mm 2 ,the device has a high power supply rejection ratio(PSRR)and a low temperature coefficient.When it is used for bias circuits in high resolution systems,a circuit to improve temperature coefficient of the output bias current can be introduced.
【关键词】 能隙基准电压源;
电源抑制比;
温度系数;
【Key words】 Bandgap voltage reference; Power supply rejection ratio; Temperature coefficient EEACC 1210;
【Key words】 Bandgap voltage reference; Power supply rejection ratio; Temperature coefficient EEACC 1210;
- 【文献出处】 微电子学 ,MICROELECTRONICS , 编辑部邮箱 ,1999年02期
- 【分类号】TN47,TN47
- 【被引频次】65
- 【下载频次】500