【摘要】 在室温下７５０ＭｅＶ氩离子对本征单晶硅进行辐照，通过用正电子湮没寿命测量技术、电子顺磁共振技术以及红外光吸收方法研究了辐照产生的缺陷．结果表明：电中性双空位是辐照产生的主要空位团；在４．３×１０１４ｉｏｎｓ／ｃｍ２的高剂量下未见样品发生非晶化转变；虽然在离子射程末端双空位的浓度随剂量的增加而显著增大，但在以电离激发过程为主要能损方式的区域里双空位的浓度基本不变．据此可以认为，电子能损过程对辐照产生的缺陷有退人作用．更多还原

【Abstract】 Single crystalline silicon specimens are irradiated at room temperatUre with750MeV argon ions. Positron lifetime, electron paramagnetic resonance as well asinfrared optical absorphon measurementS are conducted tO study the radiahon induceddefectS in the specimens. It is found that neutral divacancies are the main vacancyclusters induced by the irradiations. UP to 4.3 ×1014ions/cm2 no amorphous phase isdetected. At the end of the range the divacancy concentrahon increases dramahcallywith increasing dose whereas in the electronic processes dominating area theconcentration of divacancy saturates. It is therefore proPOsed that the radiahon induceddefectS can be annealed by the energy dePOsihon through electronic processes.更多还原