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SiC电热元件的高温失效分析
Failure Analysis of SiC Electrical Heating Element at High Temperature
【摘要】 对炉用SiC电热元件在空气介质中于1000℃~1580℃范围的高温失效行为进行了试验分析。元件表面在高温下形成熔融态SiO2薄层。由于在氧化反应中生成气体而产生气泡,气泡破裂后材料表面失去保护层,导致了高温氧化的加剧。文中对SiC电热元件在不同温度下的脱落物进行了分析,对SiC电热元件高温失效的原因进行了综合讨论
【Abstract】 The surface of SiC electrical heating elements(EHE) which were set up electric circuit to heat to 10001580 in the air was analyzed in this paper.Melting SiO2 layer was produced on the surface of EHE,and it was risen in bubbles by the gases produced during oxidizing reactions.The melting SiO2 layer lost protective role as its bubbles broken.The products oxidized at various temperatures were analyzed and the temperatureweight change curve was drawn.Finally,the failure mechanism of SiC EHE was studied.
- 【文献出处】 金属热处理 ,HEAT TREATMENT OF METALS , 编辑部邮箱 ,1999年08期
- 【被引频次】11
- 【下载频次】143