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镜面抛光硅衬底上金刚石薄膜的生长
Diamond Films Deposited on Mirror Polished Silicon
【摘要】 在镜面抛光硅衬底上加负偏压,利用微波等离子体化学气相沉积方法生长金刚石薄膜.通过改变偏压成核阶段的不同条件制备出一系列样品,与直接在镜面抛光硅衬底上不加偏压直接生长的金刚石膜相比,成核密度明显提高,可达4×109cm-2。
【Abstract】 Diamond films were deposited on mirror-polished slllcon substrate by means of bias enhanced nucleation (BEN) microwave plasma chemical vapor deposition (CVD) technique. The nucleation density and the gra1n slzes were analyzed by means of SEM, They had higher nucleation density than the films deposited on mirror-polished silicon substrate when bias was not applied.
【关键词】 偏压增强成核;
化学气相沉积;
金刚石薄膜;
镜面抛光硅片;
【Key words】 bias enhanced nucleation; chemical vapor deposition; diamond film; mirror polished silicon;
【Key words】 bias enhanced nucleation; chemical vapor deposition; diamond film; mirror polished silicon;
- 【文献出处】 吉林大学自然科学学报 ,ACTA SCIENTIARIUM NATURALIUM UNIVERSITATIS JILINENSIS , 编辑部邮箱 ,1999年04期
- 【分类号】O484
- 【被引频次】1
- 【下载频次】76