【摘要】 采用ArF脉冲准分子激光沉积法并结合退火后处理工艺，在Si（111）衬底上成功地制备了AIN晶态薄膜。X射线衍射、扩展电阻与原子力显微镜等测试结果表明：薄膜具有（101）取向，平均晶粒大小为200nm；薄膜介电性能优异，扩展电阻在108Ω以上。更多还原

【Abstract】 The (101) oriented AlN thin films have been successfully grown on Si (111)substrates by pulsed excimer laser deposition combined with following anneallng. XRD,SRP, FTIR and AFM are employed to characterize the AlN films. ResultS indicate that theAJN films have fine grains with size of 200 nm and perfect dielectric property with thespreading resistance of above 10℃ Ω.更多还原