【摘要】 利用脉冲激光剥蚀技术在抛光的硅片上制备出了Ｐｂ（Ｚｒ，Ｔｉ）Ｏ３铁电薄膜．经过淀积后的激光退火工艺，大大改善了这种膜的铁电性．研究了影响薄膜性能的多种因素，利用Ｘ射线衍射，分析了薄膜的结构．测量了薄膜的居里温度和电滞回线更多还原

【Abstract】 Ferroelectric thin films of Pb(Zr, Ti)O 3 have been fabricated on polished silicon wafers by a pulsed laser ablation technique at a substrate temperature of 100￣200℃, and the ferroelectric properties of the films can greatly be improved by a post deposition laser annealing. Some factors affecting the qualities of thin films were investigated. The structures of the films were analyzed by X ray diffraction. The Curie temperature and hysteresis loops of the ferroelectric thin films of PZT were measured.更多还原