【摘要】 利用有效质量近似，考虑有限深势阱，对半导体纳米晶的光吸收增强效应进行了研究，提出了一个基本的模型．在强限制区，随着半导体纳米晶尺寸的减小，势阶壁对电子一空穴对的相对运动的限制作用大大地增强了光吸收振子强度，对激子的质心运动的限制作用缓慢地增加了吸收振子强度，而跃迁频率的变化减小了吸收振子强度，这三者的总体贡献导致了光吸收系数的大大增强；在弱限制区，单位体积的光吸收振子强度趋于一个常数，这与著名的巨振子强度理论是一致的．用该模型计算的和用反尺寸立方关系模型计算的吸收系数同实验进行比较，其结果更与实验相。吻合．更多还原

【Abstract】 An elementary theory on optical absorption enhancement of nanometer Crystallined ispresented by using the endive mass model and finite depth potential well. In the strongconfinement region, the condnement from the boundary boosed on the relative motion of elec-iron - hole pair enhance the optiCal osmiator sbogth enonnously, the eeflter-of-Inass motionof exdton increases the oscillator strength slowly and the change of tlansition frequency decreasesthe oscillator strength with decreasing partide she. The overall contribution from the above threeterms leads tO the enormously enhancement of the absorption coeffidrit with decreasing particleshe. In the weak confinement region, the optical absorption strength per unit volume hods to aconstant which is assosciatal with the Well--known effed of giant oscillator strength. Comparisonbetween the calculatal resultS based on our model and the model of the inverse cube size dependence in the strong confinement region for nanomter CdTe and CdS has been made andour results are more consistent with the experimental results.更多还原