【摘要】 通过在GaAs（100）表面生长具有弱有序的bcc相Co超薄膜，利用同步辐射光电发射和XPS，研究了室温下不同氧暴露量时Co膜的氧吸附行为。价带谱和Co3p发射谱结果表明，当暴露氧量低于4L时，氧解离吸附;更高的氧暴露量导致表面CoO相的成核与生成。退火温度超过470K后，氧以原子形式向Co基体中扩散。O1sXPS谱分解显示，存在着对应于不同氧吸附位的两种氧物种。更多还原

【Abstract】 Metastable, weakly ordered ultrathin Co films with he phase were grown on GaAs (100)surface, and the coverage dependence of oxygen adsorption on the sulface of Co films was studied at room temperature by synchrotron radiation photoemission and XPS, For the exposuire between 1~4L of O2, oxygen adsorbs dissociatively, Hider exposure corresponds to nucleation and formation of surface CoO phase from the analysis of valence-band spectra and Co3p emission. Higher temperature exceeding 470K causes the dissolution of oxygen into the Co matrix, The decomposition of O1s XPS indicates the existence of two species of oxygen corresponding to the different adsorbed sites.更多还原