【摘要】 研究了较低掺杂浓度时InAs量子点中直接掺杂Si对其发光特性的影响.光致发光谱(PL)的测量表明,与未掺杂样品相比,掺杂样品发光峰稍微蓝移,同时伴随着发光峰谱线明显变窄.该结果表明,在生长InAs层时直接掺杂,有利于形成大小分布更均匀的小量子点.该研究对InAs自组织量子点在器件应用方面有一定的意义.更多还原

【Abstract】 The photoluminescence in directly si doped self organized InAs quantum dots was systematically studied. With doping, a decrease in linewidth and a little blue shift in peak were observed by PL measurement. The results show that direct doping when growing InAs layer may be helpful to the formation of uniform small quantum dots. The work will be meaningful for the fabrication of self organized InAs quantum dots semiconductor device.更多还原