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溅射总压对氧化钒薄膜的结构及电致变色性质的影响

EFFECTS OF TOTAL SPUTTERING PRESSURE ON STRUCTURAL AND ELECTROCHROMIC PROPERTIES OF RF MAGNETRON_SPUTTERED VANADIUM OXIDE THIN FILMS

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【作者】 王忠春; 陈晓峰; 李智勇; 胡行方;

【Author】 Wang Zhongchun Chen Xiaofeng Li Zhiyong Hu Xingfang (Shanghai Institute of Ceramics, Chinese Academy of Sciences)

【机构】 中国科学院上海硅酸盐研究所;

【摘要】 采用高频磁控溅射工艺制备了两种不同性能的V2O5薄膜,并研究了溅射总压对其微观结构、循环伏安特性及电致变色特性的影响.结果表明:当功率一定(3.8W·cm-2)时,在高气压沉积的V2O5薄膜中出现了微晶相,而在低气压沉积的薄膜中为非晶相.从循环伏安过程中实时记录的透过率变化曲线可见:随着Li+离子和电子的双重注入,薄膜在某一波长处的透过率前一阶段是增加或降低,而后一阶段却相反.含微晶相的薄膜上述现象更为明显,而且其储存Li+离子的容量也要大许多.应用能带结构理论定性地解释了V2O5薄膜复杂的电致变色现象.

【Abstract】 Effects of total sputtering pressure on the microstructures and electrochemical performances of RF magnetron_sputtered V 2O 5 thin films were investigated. The film deposited under higher pressure has a structure with microcrystalline phases embedded in an amorphous matrix, while the film deposited under lower pressure is mainly amorphous. In_situ measured transmission curves during the voltammetric process show that the transmittance of the film at a wavelength decreases or increases with the double insertion of Li + ions and electrons during the first stage, but to the contrary during the later stage. This phenomenon appears more obviously when the film was deposited under a higher pressure and the film will possess a much higher charge storage capacity. With the band structure theory, the electrochromism of V 2O 5 is explained qualitatively.

【基金】 国家攀登计划,国家自然科学基金,高性能陶瓷与超微结构国家重点实验室资助项目
  • 【文献出处】 硅酸盐学报 ,JOURNAL OF THE CHINESE CERAMIC SOCIETY , 编辑部邮箱 ,1999年01期
  • 【分类号】TQ174
  • 【被引频次】15
  • 【下载频次】132
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