【摘要】 利用导向籽晶温度梯度法（ＴＧＴ） 生长了１１０ ｍ ｍ ×８０ ｍ ｍ 的蓝宝石单晶，应用化学腐蚀、光学方法分析了该晶体不同部位、不同切片的位错腐蚀形貌、位错密度及其分布情况，发现在晶体放肩处的（１１２０） 面位错密度约为１０４ ｃｍ － ２ 量级，等径生长过程中靠近晶体中心处（０００１） 面位错密度为（３ ～４） ×１０３ｃｍ －２ ，靠近坩埚壁处（０００１） 面晶体位错密度为（５ ～６） ×１０３ｃｍ －２ ． 用同样方法分析了提拉法（Ｃｚ） 生长的５０ ｍｍ ×８０ ｍ ｍ 蓝宝石晶体的位错． 相比而言，ＴＧＴ法生长的Ａｌ２Ｏ３ 位错密度比Ｃｚ 法的Ａｌ２Ｏ３ 晶体低得多，约低一个数量级，ＴＧＴ 法可以生长大尺寸、高完整性的Ａｌ２Ｏ３ 晶体，这与ＴＧＴ 法的特殊生长工艺有密切关系．更多还原

【Abstract】 The monocrystalline Al 2O 3 sapphire with  110 mm in diameter and 80 mm in height was grown by the TGT(temperature gradient technique). The chemical etching pits, dislocation density and profile from various specimens were studied by the chemical etching experiment and under the optical microscope Leitz. The central position in the as_grown crystal has the lowest dislocation density (3～4)×10 3 cm -2 ,followed by the other in the neighbourhood of the Mo crucible wall with the dislocation density (5～6)×10 3 cm -2 , while the highest dislocation density about 10 4 cm -2 exists close to the seed. In contrast to the Cz monocrystalline sapphire, the Al 2O 3 sapphire grown by TGT has about one tenth of the average dislocation density, showing the higher integrity. This feature depends on the specific growth condition in the TGT apparatus.更多还原