【摘要】 用ＸＰＳ研究射频－直流等离子体增强化学气相沉积（ＰＥＣＶＤ）获得的氮化碳（ＣＮ）薄膜的化学结构。Ｃ１ｓ 和Ｎ１ｓ芯能级电子谱分析表明：在ＣＮ膜中含有Ｎ－ｓｐ３ 和Ｎ－ｓｐ２ 两类化学结构，在高含Ｎ膜中还含有少量的Ｎ－ｓｐ 相，且代表Ｎ－ｓｐ３ 结构的原子比为１．２８，接近４∶３，证明此膜中存在类β－Ｃ３Ｎ４ 相。且增加膜中含Ｎ 量有利于提高类β－Ｃ３ Ｎ４ 相的含量。ＣＮ膜的化学结构在离子辐照下会发生轻微变化，结果表明，随离子剂量增加，Ｎ－ｓｐ３ ／Ｎ－ｓｐ２ 比增高，但膜中氮碳原子比Ｎ／Ｃ下降更多还原

【Abstract】 The chemical structure of carbon nitride thin films,prepared by rf dc plasma enhanced chemical vapor deposition (PECVD) was studied by XPS.Analyzing the C(1s) and N(1s) core level lines indicated two types of chemical structure N sp 3C and N sp 2C binding states existed in the CN films.There is also little N spC binding state in the CN film with a nitrogen content of 22%.The ratio of N/C in N sp 3C binding state is 1 28 which is near 4∶3,thus demonstrated the existence of C 3N 4 like phase.High nitrogen content in the CN films is useful to increase the content of β C 3N 4  phase. Light changes of the chemical structure of the CN films can be observed under ion irradiation.With the increase of ion dose,the ratio of N sp 3C/N sp 2C increase,while the N/C ratio in the films decrease.更多还原