【摘要】 采用混合集成电路的方法，用ＰＩＮ管芯制作了８～１８ＧＨｚ双刀双掷开关。开关采用管芯全并联结构。反射式ＤＰＤＴ开关插损≤２．０ｄＢ，隔离度＞５９ｄＢ，开态驻波比≤１．６５，承受功率为连续波５Ｗ。吸收式ＤＰＤＴ开关插损≤２．９ｄＢ，隔离度＞５８ｄＢ，开态与全关断态驻波比≤２．１，承受功率连续波２Ｗ。电路由ＴＴＬ信号控制。更多还原

【Abstract】 GHz double pole double throw(DPDT) switches have been designed and fabricated. These switches use hybrid integrated circuits and shunt mounted PIN diode chip. The reflected DPDT switch exhibits insertion loss≤2.0 dB, isolation>59 dB and transmission VSWR≤1.65, power(cw)≥5 W. The nonreflected DPDT switch exhibits insertion loss≤2.9 dB,isolation>58 dB, VSWR≤2.1, power(cw)≥2 W. The circuits are controlled by the TTL logical signal.更多还原