【摘要】 用四探针法、扩展电阻法、背散射沟道谱和二次离子质谱等测试分析手段研究了Ｓｉ＋ ／Ｂ＋ 双注入单晶硅的快速热退火行为。结果表明：Ｓｉ＋ 预非晶化注入能有效地抑制注入硼原子的沟道效应；快速热退火Ｓｉ＋ ／Ｂ＋ 注入样品，其注入损伤基本消除，残留二次缺陷少，硼原子电激活率高；优化与控制快速热退火条件和Ｓｉ＋ ／Ｂ＋ 注入参数，制备出了电学特性优良的浅ｐ＋ ｎ 结，其二极管反偏漏电流仅为１．９ ｎＡ·ｃｍ － ２（－ １．４Ｖ）。更多还原

【Abstract】 The RTA (Rapid Thermal Annealing) behaviour of Si +/B + dual implanted crystal silicon has been studied by means of FPP (Four Point Probe), SRP(Spreading Resistance Probe), RBS(Rutherfod Backscattering Spectum)/ion channelling, SIMS (Secondary Ion Mass Spectrometer). The results show that the Si + preamorphized implantation can effectively inhibit the boron channelling effect; the implant induced damage which was produced by Si +/B + dual implant can basically be removed by RTA, with high boron electrical active rate and little residual se condary defects; and that the shallow p +n junctions with the good electrical properties have been fabricated by optimizing the Si +/B + dual controlling implant parameters and the RTA conditions, with the reverse leakage current density of 1.9 nA·cm -2 at1.4V.更多还原