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HBT电压控制振荡器的相位噪声
Phase Noise in the HBT Voltage controlled Oscillator
【摘要】 研究了电压控制振荡器(VCO)的相位噪声与构成该振荡器的有源器件的低频噪声的关系,测试了SiBJT、AlGaAs/GaAs HBT和GaInP/GaAs HBT的低频噪声,并分析了各自低频噪声产生的原因,提出了选择GaInP/GaAs HBT VCO来实现微波固体振荡器低相位噪声化这一发展方向。
【Abstract】 We study the relations between phase noise in a voltage controlled oscillator(VCO) and low frequency noise in the active device of which the VCO is made,measure the low frequency noises in Si BJT,AlGaAs/GaAs HBT and GaInP/GaAs HBT respectively,and explain the reasons for existence of the low frequency noises.We conclude that GaInP/GaAs HBT VCO is a good choice to get lower phase noise in the microwave solid oscillator.
- 【文献出处】 固体电子学研究与进展 ,RESEARCH & PROGRESS OF SOLIA STATE ELECTRONICS , 编辑部邮箱 ,1999年03期
- 【分类号】TN752.5;TN322.8
- 【被引频次】5
- 【下载频次】76