【摘要】 计算了具有线性Ｇｅ 分布的ＳｉＧｅ 基区价带有效态密度和空穴浓度的分布，分析了基区内建电场的物理机制，分别采用Ｂｏｌｔｚｍ ａｎｎ 统计和Ｆｅｒｍ ｉＤｉｒａｃ统计给出了内建电场分布的表达式并进行了计算，最后讨论了基区重掺杂对电场的影响更多还原

【Abstract】 In this work, distributions of valence band effective states density and hole density have been calculated for a SiGe base with linearly graded Ge profile and physical mechanism of base built in electric field has been analyzed. From Boltzmann statistics and Fermi Dirac statistics, expressions of the electric field have been presented and simulated. Finally, influence of high doping level in base on built in electric field has been discussed.更多还原