【摘要】 用Ｋｅｉｔｈｌｅｙ Ｓ９００Ａ 型半导体自动参数测试仪测量了用ＭＯＣＶＤ方法生长的ＩｎＧａＰ／ＧａＡｓ异质结样品的界面ＣＶ的分布。用多项式逐段拟合的方法，转化得到界面浓度的分布，最后计算得到该体系的价带不连续性ΔＥｖ 为３１６ ｍ ｅＶ，约相当于０．６９ ΔＥｇ更多还原

【Abstract】 The C V profile of InGaP/GaAs heterojunction grown by MOCVD method has been measured by Keithley S900A semiconductor parametric test system. After transfering it to the hole interface concentration profile by polynomial sectional curve fitting method, we finally obtained the calculated valence band discontinuity Δ E v=316 meV, corresponding to about 0.69 Δ E g.更多还原