【摘要】 用溶胶－ 凝胶法制备了ＰＺＴ压电薄膜，研制了Ａｕ／ＰＺＴ／ＰＴ／ＴｉＯ２／ＮｉＴｉ／Ｓｉ（１００） 多层膜结构，用ＸＲＤ、ＡＦＭ、ＴＥＭ－ ＥＤＸ和ＳＡＤ 技术考察了薄膜的表面形貌、相结构演化、以及剖面的元素分布特性。结果表明：ＰＺＴ膜与ＮｉＴｉ 合金膜的结合良好、稳定；ＰＴ层的引入，使无定型ＰＺＴ薄膜在５５０℃退火后，转变为钙钛矿结构，降低了晶化温度，并有效地抑制焦碌石相的形成；ＮｉＴｉ 薄膜结晶良好；ＴｉＯ２ 过渡层显著改善了ＰＺＴ膜与ＮｉＴｉ 合金膜的结合性能；多层结构界面Ｎｉ 元素的扩散明显。介电、铁电性能测试结果表明ＰＺＴ薄膜仍保持了较高的介电常数、低损耗、低漏电流密度，ＰＺＴ－ ＮｉＴｉ 结构呈现电滞回线。ＰＺＴ与ＮｉＴｉ 的复合在工艺和性能上是可以兼容的。更多还原

【Abstract】 The Pb(Zr,Ti)O 3(PZT) thin film was fabricated by sol-gel technique to form Au/PZT/PT/TiO 2/NiTi/Si(100) structure. The surface morphology phase structure evolution, and the element profiles were examined by using AFM, XRD, TEM-EDX and SAD methods. Results of experiments showed that PZT thin film was well connected with NiTi film; the crystallization temperature of the PZT was reduced by introducing PT layer; both PZT and NiTi were well crystallized; the amorphous PZT thin film transited to the perovskite phase after annealing at 550℃ for 30 min, the formation of pyrochlore phase was effectively retarded; the lattice matching was improved by TiO 2 layer; the interdiffusion of mickel in the multilayer was revealed. The measurement results indicated that the PZT thin film in the Au/PZT/PT/TiO 2/NiTi/Si(100) multilayer retained high dielectric constant, low dissipation factor, low leak current density and ferroelectric hystersis loop, showing its compatibility with NiTi film in processing and properties.更多还原