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富Pb的PZT铁电薄膜电性能异常

A STUDY OF ABNORMAL ELECTRIC PROPERTIES OF LEAD ZIRCONATE TITANATE THIN FILMS CAUSED BY EXCESS Pb

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【作者】 宋志棠林成鲁任巍张良莹姚熹

【Author】 SONG Zhitang and LIN Chenglu(State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Metallurpy, Chinese Academy of Sciences,Shanghai 200050)REN Wei; ZHANG Liangying and YAO Xi(Electronic Materials Research Laboratory, Xi’an Ji

【机构】 中国科学院上海冶金研究所信息功能材料国家重点实验室!上海200050西安交通大学电子材料与器件研究所!西安7100497

【摘要】 采用金属有机物热分解法制备了不同Pb过量的锆钛酸铅(PZT)铁电薄膜.观测到Ph过量PZT薄膜电滞回线束腰与C-V曲线四峰的异常现象,其异常程度随时间加剧.这是薄膜样品在晶界和界面上的PbO2相所诱导的陷阱电荷对电畴产生钉扎的结果.陷附电荷对电畴的钉扎程度与陷阱电荷的密度以及陷附电荷与电畴的作用状况有关,通过改变晶界处的陷阱电荷的密度与分布可改变薄膜电性能的异常程度.

【Abstract】 Lead zirconate titanate (PZT) thin films with excess Pb were prepared by metal-organic decomposition process. The abnormal pinched P-E hysteresis loops and abnormal four peaks C-V curves were obtained for PZT films with excess Pb. Meanwhile the degree of abnormal electric properties of PZT thin films becomes more severe with time. The results can be explained by formation of PbO2 phase at boundaries of crystalline grains and clusters, and at the interface between bottom electrode and film during annealing processl PbO2 may induce trapped charges and acts as pinning centers, and has a strong effect on the ferroelectric domains. The degree of abnormal electric properties of PZT films is closely related with trapped charges at grain boundaries and interfaces.

【基金】 国家自然科学基金!No.59582011,No.69728020
  • 【文献出处】 功能材料与器件学报 ,JOURNAL OF FUNCTIONAL MATERIALS AND DEVICES , 编辑部邮箱 ,1999年01期
  • 【分类号】TM223
  • 【被引频次】8
  • 【下载频次】146
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