【摘要】 利用Ｈ２／Ｈ２Ｏ体系获得不同的氧分压，采用四电极法测量了掺杂ＳｒＬｉ１／４Ｎｂ３／４Ｏ３的ＳｒＴｉＯ３瓷体在８００～１２００℃，ＰＯ２＝１０－１７～１０５Ｐａ的电导率。通过ｌｏｇＰＯ２－ｌｏｇσ图，计算出半导化活化焓约为２８７．７ｋＪ／ｍｏｌ，讨论了ＳｒＬｉ１／４Ｎｂ３／４Ｏ３掺杂的ＳｒＴｉＯ３在不同氧分压区域的主要缺陷类型及ｎ型半导化向ｐ型半导化转变的特点更多还原

【Abstract】 The defects of polycrystalline SrTiO3 doped with SrLi1/4Nb3/4O3 were studied at oxygen pressure 10-17 105 Pa which were obtained by H2/H2O system at temperature 8001200. The experimental data were schemed with log PO2 vs log . From the linerar relationship between log PO2 and log FZ], the calculated semiconductive activation enthalpies of SrTiO3 doped with SrLi1/4Nb3/4O3 was about 287.7kJ/mol at PO2=10-7Pa. At the same time,the dominant dominant defects were deduced and the semiconductive transition mechanism were discussed by the theory of defect chemistry.更多还原