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Cu-TiN复合薄膜的微结构与电性能

The Microstructure and Electrical Property of Cu-TiN Composite Film

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【作者】 李戈扬吴亮施晓蓉张流强李鹏兴

【Author】 LI Geyang,WU Liang,SHI Xiaorong,ZHANG Liuqiang,LI Pengxing State Key Lab. for MMCs,Shanghai Jiao Tong University,Shanghai,200030,China

【机构】 上海交通大学金属基复合材料国家重点实验室

【摘要】 本文采用SEM、EDAX和TEM等手段研究了多靶磁控溅射制备的Cu-TiN复合薄膜,并测定了薄膜的电阻率。研究表明:复合薄膜的微结构随TiN含量及基片温度发生明显变化,其电阻率在基片温度约为200℃时取得极小值,约为室温沉积薄膜电阻率的1/4。

【Abstract】 Cu-TiN composite film was prepared by multitargets magnetron sputtering system.The microstructure of composite film was studied by SEM,EDAX and TEM,its resistivity was measured.The results show that the microstructure of composite film varies obviously with increase of substrate temperature and the resistivity of composite film reaches the minimum at substrate temperature about 200,which is about 1/4 of that of the film deposited at ambient temperature.

  • 【文献出处】 功能材料 ,JOURNAL OF FUNCTIONAL MATERIALS , 编辑部邮箱 ,1999年03期
  • 【分类号】TB43
  • 【被引频次】6
  • 【下载频次】155
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