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多晶材料晶粒生长的Monte Carlo计算机模拟方法 Ⅱ 模拟异常晶粒生长

Monte Carlo Computer Methods for Simulating Grain Growth of Polycrystalline Material Simulating Abnormal Grain Growth

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【作者】 钟晓征陈伟元王豪才郑军

【Author】 ZHONG Xiaozheng,CHEN Weiyuan,WANG Haocai,ZHENG Jun CAE Center,University of Electronic Science and Technology,Chengdu,610054,China

【机构】 成都电子科技大学CAE中心

【摘要】 晶粒生长的显微结构的演化是一种受诸多因素影响的复杂过程。前文已简述模拟二维正常晶粒生长所采用的基本蒙特卡罗(MonteCarlo)方法。异常晶粒生长的最直接原因是总体系能的改变。而导致体系能变化的因素很多。本文在重点分析由于晶界能和迁移率的各向异性引起体系能量变化的基础上,介绍模拟异常晶粒生长的基本方法,为解决如何将实际生长环境复杂性引入生长模型中及如何进一步模拟生长的问题提供重要思路。

【Abstract】 The microstructure evolution of grain growth is a complex procedure which is effected by many factors.The fundamental Monte Carlo methods for simulating normal grain growth in two dimensions had been briefly introduced in our last paper.The most direct reason for abnormal grain growth is the variation of total system energy.There are many factors which will bring about some changes in system energy.On the basis of emphatic analysis of the effect on the changes of system energy by the anisotropy of grain boundary energies and mobilities,this paper presents the basic methods for simulating abnormal growth.It provides an important idea to solve the problem of how to introduce the complexity of growth environment to the growth model and simulate grain growth further.

【基金】 国防科工委基金
  • 【文献出处】 功能材料 ,JOURNAL OF FUNCTIONAL MATERIALS , 编辑部邮箱 ,1999年03期
  • 【分类号】O78
  • 【被引频次】14
  • 【下载频次】398
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