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rf-dc PECVD制备的a-C∶H(N)薄膜的结构分析
Characterization of a-CH(N) Films Deposited by rf-dc PECVD
【摘要】 采用射频-直流等离子增强化学气相沉积技术用C2H2和N2气的混合气体制备出a-C∶H(N)薄膜,用TEM、红外谱、XPS等多种分析测试手段研究了薄膜的结构。结果表明a-C∶H(N)薄膜中N与C原子可形成NC、CN和NC键,而碳氢原子主要以CH2基的形式存在。且薄膜中存在具有理想化学配比的C3N4相,薄膜的结构是由C3N4相镶嵌在非晶态CNx基体中组成
【Abstract】 The a-CH(N) films were deposited from mixture of C2H2 and N2 by r.f.-d.c. PECVD method.The films were characterized by TEM,FTIR and XPS.Results show that N atoms are incorporated in a-CH(N) films as C N , C N and C N bonds. C atoms are incorporated with H mainly as CH2.The stoichiometry exist in a-CH(N) films, and a-CH(N) films are consisted of C3N4 crystallite phase and CN x matrix which is identified as predominantly sp2 bonded structure.
- 【文献出处】 功能材料 ,JOURNAL OF FUNCTIONAL MATERIALS , 编辑部邮箱 ,1999年02期
- 【分类号】TQ174.758.11
- 【被引频次】4
- 【下载频次】90