节点文献
性能优异的多功能宽禁带半导体AlN薄膜
AlNAn Excellent Multifunctional Wide Bandgap Semiconductor
【摘要】 作为具有优异介电性、压电性的宽禁带半导体材料,AlN是重要的电子封装材料、绝缘介质材料、声表面波材料和蓝光紫外发光材料。本文介绍了AlN材料结构特性、薄膜制备及应用的最新进展
【Abstract】 Due to possessing many outstanding properties,aluminum nitride has great potential for electronic packaging,surface acoustic wave device and optoelectronic device applications.In this paper,the crystallographic and material characteristics,growth of films and the latest advance of application are summarized.
- 【文献出处】 功能材料 ,JOURNAL OF FUNCTIONAL MATERIALS , 编辑部邮箱 ,1999年02期
- 【分类号】TN304.23
- 【被引频次】32
- 【下载频次】443