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a-C:H(N)薄膜的慢正电子分析

The Study of a-C: H(N) Films by Low Energy Positron Beam

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【作者】 程宇航吴一平邹柳娟陈建国乔学亮谢长生翁惠民

【Author】 CHENG Yuhang;WU Yiping; ZOU Liujuan; CHEN Jianguo; QIAO Xueliang;XIE Changsheng; WENG Huimin(Department Of Materials Setence and Engineering, 2 Department of Physics)(Huazhong University of Science and Technology. Wuhan, 430074, China)(Depart. of Modern P

【机构】 华中理工大学材料科学与工程系!湖北武汉430074华中理工大学物理系!湖北武汉43

【摘要】 采用C2H2和N2的混合气体在单晶Si衬底上用射频一直流等离子化学气相沉积法制备a-C:H(N)薄膜,用Fourier红外谱研究了a-C:H(N)薄膜的结构。用慢正电子湮没技术研究了类金刚石薄膜中缺陷的深度分布以及N的百分含量对薄膜中缺陷浓度和缺陷类型的影响。Fourier红外测试结果表明,a-C:H(N)薄膜中氮含量随混合气体中N2百分含量的升高而增大,薄膜中碳氮原子形成C≡N键。慢正电子分析表明.单晶Si衬底具有很高的缺陷浓度,类金刚石薄膜中的缺陷浓度较低,且缺陷均匀分布,薄膜表面存在一缺陷浓度较高的薄层,而膜一基之间存在一很宽的界面层。a-C:H(N)薄膜的缺陷浓度随N含量的增加而增大,但含饲量不改变薄膜中的缺陷类型。

【Abstract】 a -- C: H(N ) films were deposited on Si substrate from the mixture Of C2H2 and N2 by r. f. -d. c. plasma enhanced chemicalvapor deposition. The structure of a -- C: H (N ) films were studied by Fourier IR spectrum. The distribution of void, the influence of Ncontent on the density and the type of void in a -- C: H (N) films were systemstic alloy studied by low energy positron beam. The IRspectra shows that the N content of a -- C: H(N) films increase with the increasing of N2 percentage in the foed gas, and C≡N bonds canbe formed betWeen C and N atoms. The density of void in Si substrate is the highest. A constant distribution of void was obserVed throughthe tilms,the density of void is lower, but the densily Of void in the surface lay is higher. The density of void in the films increasesmonotonously with the increasing of N2 percentage in the feed gas, but the N content has no effect on the type of void.

【基金】 华中理工大学塑性成型模拟及模具技术国家重点实验室资助
  • 【文献出处】 功能材料 ,JOURNAL OF FUNCTIONAL MATERIALS , 编辑部邮箱 ,1999年01期
  • 【分类号】O484
  • 【被引频次】1
  • 【下载频次】84
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