【摘要】 用光助，低压ＭＯＣＶＤ方法获得ｐ－ＺｎＳｅ，ｐ－ＺｎＳＳｅ受主浓度为３×１０１７ｃｍ－３和８×１０１６～２×１０１７ｃｍ－３的条件下，生长制备了ｎ－ＺｎＳＳｅｎ－ＺｎＳｅ／ＺｎＣｄＳｅ／ｐ－ＺｎＳｅｐ－ＺｎＳＳｅ的ＺｎＳｅＬＤ结构。在经解理约为１ｍｍ腔长样品上，在７７Ｋ，观测到其蓝绿发光峰值半高宽随脉冲电压增加出现窄化现象，表明有激射产生。更多还原

【Abstract】 The p type doping of ZnSe and ZnS 0.09 Se 0.91 grown by photo assisted low pressure metal organic vapour deposition (LP MOCVD) was obtained.Their hole concentrations were 3×10 17 cm -3 and 8×10 16 ～2×10 17 cm -3 respectively.The sample were grown on (100) GaAs substrates using dimethyzinc (DMZn),dimethyselenium (DMSe) and tertiary butylamine (tBNH 2) as source materials.The profiled quartz reactor with an optical window for light irradiation was used.The light source was a 200W Hg lamp.The growing surface was irradiated with the power of 10 mW/cm 2～40 mW/cm 2.We prepared ZnSeCd/ZnSe/ZnSSe laser diode (LD) structures.At 77 K the blue green stimulated emission in ZnSe LD structure was observed at pulse voltage.更多还原