节点文献
高功率GaAlAs/GaAs量子阱SCH半导体激光器
High Power GaAlAs/GaAs SCH Lasers
【摘要】 利用分子束外延生长装置生长出了GaAlAs/GaAs梯度折射率分别限制(GRIN-SCH)单量子阱结构材料。样品的测量结果表明,样品质量达到了设计要求。利用该材料制作的激光二极管,室温连续工作,功率为1 W,斜率效率达到1.04 W/A。
【Abstract】 The GaAlAs/GaAs material with gradient refraction index separate confinement single quantum well structure has been grown by MBE method.The experimental results show that samples quality has reached requirement of design.The output power of laser diodes with the material is up to 1 W and the slope efficiency is as high as 1.04 W/A.
- 【文献出处】 光电子·激光 ,Journal of Optoelectronics.laser , 编辑部邮箱 ,1999年06期
- 【分类号】TN248.4
- 【下载频次】64