【摘要】 用射频磁控反应溅射的方法，以 Ａｌ及 Ａｌ＋ Ｍｎ Ｆ２ 为靶材，石英玻璃为衬底，在不同的射频功率下，制备了 Ａｌ Ｎ 多晶态和非晶态两类薄膜。发现非晶态薄膜吸收峰位置较多晶态薄膜向短波移动２０ｎｍ 。对于非晶态薄膜，通过喇曼光谱的分析，得到了 Ａｌ Ｎ 薄膜的特征声子能量的信息。首次用金属 Ａｌ和块状 Ｍｎ Ｆ２ 共溅射的方法，制备了 Ａｌ Ｎ： Ｍｎ Ｆ２ 薄膜，在退火后的多晶态样品中，测得了 Ｍｎ 的特征光致发光。更多还原

【Abstract】 Amorphous and polycrystalline Aluminum Nitride thin film were prepared with different power by radio frequency magnetron reaction sputtering on the quartz.High pure Al,MnF 2 were used as target materials and N 2,Ar were used as sputting gas.It is observed that the absorb peak position of the amorphous thin film is 20 nm shorter than that of the pollycrystalline one.The information of characteristic phonon frequency of amorphous AlN thin film is obtained through the analysis of Raman Spectrum.It is the first report that the AlN:MnF 2 thin film was prepared by sputting with the target of Al and MnF 2 together.In the anealed polycrystalline AlN:MnF 2 thin film,the characteristic photolumineascence of Manganese was found.更多还原