【摘要】 运用近场光谱方法研究了在蓝宝石衬底上用低压ＭＯＣＶＤ方法外延生长的ＧａＮ蓝光二极管的杂质发光光谱。研究结果表明近场光谱为研究样品表面微观发光机理中提供了一个有力的手段，它能够给出样品表面微区空间分辨的局域光谱信息。本文给出了研究中所观察到的一些实验现象，并对近场光谱中各发光峰的强度随注入电流（电压）变化关系进行了深入研究更多还原

【Abstract】 By using near field spectroscopy we have studied the electro luminescence spectrum of GaN impurity epitaxied on sapphire substrate by low pressure MOCVD.The experimental results indicate that the near field spectroscopy is a powerul tool in the study of local luminescence on nanometer scale. We have studied the characteristic of the peak intensities in the near field spectrum vs.the inject current,meanwhile some experimental phenomenon are exhibited in this paper.更多还原