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CMOS电路参数的统计优化设计
The Statistical Optimising Design of CMOS IC Parameter
【摘要】 本文提出了一种用实验设计与模拟相结合对CMOS集成电路参数进行统计优化设计的方法,分析工艺因素设置及其起伏对电路参数的影响,建立起电路参数相对主要工艺因素变化的宏模型,并用模型公式找出使电路参数在预期值附近且偏差最小的优化工艺条件.
【Abstract】 A method to optimize CMOS IC parameters using experimental design combining simulations was presented.The effect of process factors′fluctuation on circuit parameters was analyzed and the macro model of circuit parameters was set up to model the relationship between circuit parameters and process factors.Using the model we can get the optimum process conditions which make the threshold voltage at the expected value and with the smallest deviation.
【关键词】 实验设计;
工艺因素;
阈值电压;
优化设计;
【Key words】 Experimental design; Process factors; Threshold voltage; Optimising design;
【Key words】 Experimental design; Process factors; Threshold voltage; Optimising design;
- 【文献出处】 电子学报 ,ACTA ELECTRONICA SINICA , 编辑部邮箱 ,1999年05期
- 【分类号】TN432.02
- 【被引频次】6
- 【下载频次】103