【摘要】 采用定位的横断面透射电子显微术观察了P+Si065Ge035/pSi异质结内光发射红外探测器的微结构.该器件光敏区由6层p+Si065Ge035和5层UDSi层组成,每层都比较平整,各层厚度分别为6nm和32nm.在Si065Ge035/UDSi界面处存在应力场,但未观察到晶体缺陷.非晶SiO2台阶上的Si065Ge035和UDSi层是波浪状的多晶层.光敏区的边界处存在小于120nm宽的缺陷区,晶体缺陷的类型为层错和微孪晶更多还原

【Abstract】 Microstructure of P + Si 0 65 Ge 0 35 /p Si heterojunction internal photoemission (HIP) infrared detector has been observed by using localization cross section transmission electron microscopy.The photo sensitive area in the detector consists of 6 P + Si 0 65 Ge 0 35 layers and 5 UD Si layers,which are smooth and have thickness of 6nm and 32nm,respectively.A stress field exists on the interface between Si 0 65 Ge 0 35 and UD Si layers,but the crystal defects have not been found in this area.Both Si 0 65 Ge 0 35 and UD Si layers on amorphous SiO 2 step consist of polycrystals and are in the shape of waves.There are defect regions in the edger of photo sensitive area.The region is less than 120nm in width.The crystal defects are stacking faults and microtwins.更多还原