【摘要】 本文采用恒定电流应力的ＱＢＤ测试来描述超薄隧道氧化层的质量。Ｅ２ＰＲＯＭ失效的内在机理是由于隧道氧化层中的电荷陷阱。并同时绘出了ＱＢＤ的测试方法。测试表明，使用８ｎｍ隧道氧化层，ＱＢＤ＞５Ｃ／ｃｍ２时，可获得高质量的Ｅ２ＰＲＯＭ电路，擦／写次数可超过１００万次。更多还原

【Abstract】 The dielectric reliability of the thin tunnel oxide film has been characterized and monitored by using the constant current stressed Q BD test. Charge trapping in the tunnel oxide is an intrinsic failure mechanism associated with E 2PROM. Q BD testing method is described. High performance E 2PROM devices were fabricated using 8 nm tunnel oxide with Q BD > 5 C/cm 2, excellent W/E endurance over one million cycles was acquired.更多还原