【摘要】 应用脉冲激光沉积法和光刻技术我们成功地制作Ａｇ／Ｐｂ（Ｚｒ０．５３Ｔｉ０．４７）Ｏ３／ＹＢａ２Ｃｕ３Ｏ７－ｘ（ＰＺＴ／ＹＢＣＯ）三端器件．为了降低矫顽场，应用变形相界（ｘ≈０．５３）的５５０纳米厚的ＰＺＴ作为门电极，通过优化沉积条件和门电极面积小型化（６×１０－６ｃｍ２），在６４Ｋ下三端器件门电极显示了极好的电性能，低的矫顽场（～３７ｋＶ／ｃｍ）、大的饱和极化强度（６０μＣ／ｃｍ２）、剩余极化强度（４１μＣ／ｃｍ２）以及击穿电压～３×１０５Ｖ／ｃｍ．对于我们的场效应器件，在±９Ｖ的情况下沟道电阻被调制～３％．更多还原

【Abstract】 Abstract The three terminal devices Ag/Pb(Zr 0.53 Ti 0.47 )O 3/YBa 2Cu 3O 7- δ (Ag/PZT/YBCO) have been successfully fabricated by pulsed laser deposition technique and photolithography. To lower the applied field of devices, the PZT layer with composition near the morphotropic phase boundary, x ≈0.53, was used. By optimizing the deposition condition and minimizing the electrode area of the gate(～6×10 -6 cm 2), the three terminal devices demonstrated excellent properties at 64K: low coercive field(～37kV/cm), large saturation polarization (～60μC/cm 2) and remnant polarization (～41μC/cm 2), and high breakdown field of ～3×10 5V/cm. The channel resistance R DS was modulated about 3% under the gate voltage of ±9V at 64K ( T C0 =70K) for the three terminal devices.更多还原