【摘要】 用磁控溅射方法及选择铌阳极氧化和选择铌刻蚀工艺制备了 Ｎｂ／ Ａｌ Ａｌ Ｏｘ／ Ｎｂ 全铌隧道结， 给出了工艺要点。根据全铌结的参量， 设计了全铌隧道结ｄｃ Ｓ Ｑ Ｕ Ｉ Ｄ。制成的ｄｃ Ｓ Ｑ Ｕ Ｉ Ｄ的传输函数δ Ｖ／δ～１４ ｍ Ｖ／０，其本征能量分辨率达到２４ ｈ。更多还原

【Abstract】 The Nb/Al AlO x/Nb all niobium tunnel junctions were fabricated by dc magnetron sputtering,with selective niobium etching process and selective niobium anodization process.DC SQUIDs were designed and fabricated according to the parameters of the Nb/Al AlO x/Nb junctions.The SQUIDs fabricated have their flux to voltage transfer coefficient δV/δΦ=1 4mV/Φ 0,and intrinsic energy resolution ε～24h.更多还原