【摘要】 本文针对绝缘栅双极型晶体管（ＩＧＢＴ）的半导体特性，提出了一种宏模型结构，通过参数的合理选择， 使得这种宏模型的外特性与ＩＧＢＴ的特性基本相似。并扩展设计了一种读取ＰＳＰＩＣＥ输出数据以计算ＩＧＢＴ工 作过程中的动态和静态功耗的方法，同时应用宏模型对一种ＩＧＢＴ斩波器的缓冲电路进行了优化设计。更多还原

【Abstract】 Based on the semiconductor structure of IGBT (Insulated Gate Bipolar Transistor), a kind of Macromodel for PSPICE simulator has been proposed in this paper. By optimal choice in parameters,the output characteristics of the macromodel is similar to practical devices. The method of computing the dynamic and steady-state power loss of IGBT has also been expandly designed by reading export datum from PSPICE simulation. Meanwhile,the snubber circuit of a kind of IGBT chopper is optimized to verify the validity of the macramodel and expanding function for PSPICE.更多还原