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脉冲激光法外延生长锰氧化物薄膜
EPITAXIAL GROWTH OF THE MANGANESE OXIDE THIN FILMS PREPARED BY PULSED LASER DEPOSITION
【摘要】 利用脉冲激光法在LaAlO3衬底上外延生长了La-Ca-Mn—O、La-Sr-Mn-O等巨磁电阻薄膜.测定了这些薄膜的电阻—温度特性,观测到了其铁磁转变及巨磁电阻效应实验发现,较高的淀积温度使薄膜的峰值转变温度Tp降低、峰值电阻率增大,而高温后退火则具有相反的效果分析比较了多种因素对薄膜生长与性能的影响及其机理
【Abstract】 Epitaxial growth of colossal magnetoresistive thin films of manganese oxides of La1-xSrxMnO3, La1-xCaxMnO3 and Pr1-xSrxMnO3 have been achieved on LaAlO3 single crystal substrates by pulsed laser deposition. The temperature dependence of resistivity of the films was measured and the negative magnetoresistive effects have been observed. Studies indicated that deposition at higher temperature decreased the transition peak temperature Ti of the films and simultaneously increased the maximum resistivity value. Annealing at higher temperature. however, produced an op posite effect on the resistivity behavior of these films. The mechanisms and the factors that influence the growth behaviors and the properties of the films were analyzed tentatively.
【Key words】 manganese oxide thin films; colossal magnetoresistance; epitaxial growth; pulsed laser deposition;
- 【文献出处】 材料研究学报 ,CHINESE JOURNAL OF MATERIAL RESEARCH , 编辑部邮箱 ,1999年06期
- 【分类号】O484
- 【被引频次】1
- 【下载频次】88